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SILICON POWER MOS FET
NE5520279A
3.2 V OPERATION SILICON RF POWER LDMOS FET
FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS
DESCRIPTION
The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the
transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology
(our WSi gate laterally diffused MOS FET) and housed in a surface mount package. This device can deliver 32.0
dBm output power with 45% power added efficiency at 1.8 GHz under the 3.2 V supply voltage.
FEATURES
? High output power
: P out = 32.0 dBm TYP. (V DS = 3.2 V, I Dset = 700 mA, f = 1.8 GHz, P in = 25 dBm)
? High power added efficiency : ? add = 45% TYP. (V DS = 3.2 V, I Dset = 700 mA, f = 1.8 GHz, P in = 25 dBm)
? High linear gain
? Surface mount package
? Single supply
APPLICATION
? Digital cellular phones
: G L = 10 dB TYP. (V DS = 3.2 V, I Dset = 700 mA, f = 1.8 GHz, P in = 5 dBm)
: 5.7 ? 5.7 ? 1.1 mm MAX.
: V DS = 2.8 to 6.0 V
: 3.2 V DCS1800 Handsets
ORDERING INFORMATION
Part Number
NE5520279A-T1
Package
79A
Marking
A2
Supplying Form
? 12 mm wide embossed taping
? Gate pin face the pe rforation side of the tape
? Qty 1 kpcs/reel
NE5520279A-T1A
? 12 mm wide embossed taping
? Gate pin face the perforation side of the tape
? Qty 5 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE5520279A-A
Caution : Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10123EJ03V0DS (3rd edition)
Date Published July 2003 CP(K)
The mark ? shows major revised points.
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